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This work describes a resonance Raman study performed in the domes of monolayer MoS2 using 23 different laser excitation energies covering the visible and near-infrared (NIR) ranges. The multiple excitation results allowed us to investigate the exciton-phonon interactions of different phonons (A'1, E', and LA) with different excitonic optical transitions in biaxially strained monolayer MoS2. The analysis of the intensities of the two first-order peaks, A'1 and E', and the double-resonance 2LA Raman band as a function of the laser excitation furnished the values of the energies of the indirect exciton and the direct excitonic transitions in the strained MoS2 domes. It was noticed that the out-of-plane A'1 phonon mode is significantly enhanced only by the indirect exciton I and the C exciton, whereas the in-plane E' mode is only enhanced by the C exciton of the MoS2 dome, thus revealing the weak interaction of these phonons with the A and B excitons in the strained MoS2 domes. On the other hand, the 2LA Raman band is significantly enhanced at the indirect exciton I and by the A (or B) exciton but not enhanced by the C exciton, thus showing that the LA edge phonons that participate in the double-resonance process in MoS2 have a weak interaction with the C exciton.
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The layered transition-metal dichalcogenide material 1T-TaS2 possesses successive phase transitions upon cooling, resulting in strong electron-electron correlation effects and the formation of charge density waves (CDWs). Recently, a dimerized double-layer stacking configuration was shown to form a Peierls-like instability in the electronic structure. To date, no direct evidence for this double-layer stacking configuration using optical techniques has been reported, in particular through Raman spectroscopy. Here, we employ a multiple excitation and polarized Raman spectroscopy to resolve the behavior of phonons and electron-phonon interactions in the commensurate CDW lattice phase of dimerized 1T-TaS2. We observe a distinct behavior from what is predicted for a single layer and probe a richer number of phonon modes that are compatible with the formation of double-layer units (layer dimerization). The multiple-excitation results show a selective coupling of each Raman-active phonon with specific electronic transitions hidden in the optical spectra of 1T-TaS2, suggesting that selectivity in the electron-phonon coupling must also play a role in the CDW order of 1T-TaS2.
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In this perspective review, we discuss the power of polarized Raman spectroscopy to study optically anisotropic 2D materials, belonging to the orthorhombic, monoclinic and triclinic crystal families. We start by showing that the polarization dependence of the peak intensities is described by the Raman tensor that is unique for each phonon mode, and then we discuss how to determine the tensor elements from the angle-resolved polarized measurements by analyzing the intensities in both the parallel- and cross-polarized scattering configurations. We present specific examples of orthorhombic black phosphorus and monoclinic 1T'-MoTe2, where the Raman tensors have null elements and their principal axes coincide with the crystallographic ones, followed by a discussion on the results for triclinic ReS2 and ReSe2, where the axes of the Raman tensor do not coincide with the crystallographic axes and all elements are non-zero. We show that the Raman tensor elements are, in general, given by complex numbers and that phase differences between tensor elements are needed to describe the experimental results. We discuss the dependence of the Raman tensors on the excitation laser energy and thickness of the sample within the framework of the quantum model for the Raman intensities. We show that the wavevector dependence of the electron-phonon interaction is essential for explaining the distinct Raman tensor for each phonon mode. Finally, we close with our concluding remarks and perspectives to be explored using angle-resolved polarized Raman spectroscopy in optically anisotropic 2D materials.
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One-dimensional defects in two-dimensional (2D) materials can be particularly damaging because they directly impede the transport of charge, spin, or heat and can introduce a metallic character into otherwise semiconducting systems. Current characterization techniques suffer from low throughput and a destructive nature or limitations in their unambiguous sensitivity at the nanoscale. Here we demonstrate that dark-field second harmonic generation (SHG) microscopy can rapidly, efficiently, and nondestructively probe grain boundaries and edges in monolayer dichalcogenides (i.e., MoSe2, MoS2, and WS2). Dark-field SHG efficiently separates the spatial components of the emitted light and exploits interference effects from crystal domains of different orientations to localize grain boundaries and edges as very bright 1D patterns through a Cerenkov-type SHG emission. The frequency dependence of this emission in MoSe2 monolayers is explained in terms of plasmon-enhanced SHG related to the defect's metallic character. This new technique for nanometer-scale imaging of the grain structure, domain orientation and localized 1D plasmons in 2D different semiconductors, thus enables more rapid progress toward both applications and fundamental materials discoveries.
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We report on photoluminescence emission imaging by femtosecond laser excitation on twisted bilayer graphene samples. The emission images are obtained by tuning the excitation laser energies in the near infrared region. We demonstrate an increase of the photoluminescence emission at excitation energies that depends on the bilayer twist angle. The results show a peak for the light emission when the excitation is in resonance with transitions at the van Hove singularities in the electronic density of states. We measured the photoluminescence excitation peak position and width for samples with various twist angles showing resonances in the energy range of 1.2 to 1.7 eV.
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Double-resonance Raman scattering is a sensitive probe to study the electron-phonon scattering pathways in crystals. For semiconducting two-dimensional transition-metal dichalcogenides, the double-resonance Raman process involves different valleys and phonons in the Brillouin zone, and it has not yet been fully understood. Here we present a multiple energy excitation Raman study in conjunction with density functional theory calculations that unveil the double-resonance Raman scattering process in monolayer and bulk MoS2. Results show that the frequency of some Raman features shifts when changing the excitation energy, and first-principle simulations confirm that such bands arise from distinct acoustic phonons, connecting different valley states. The double-resonance Raman process is affected by the indirect-to-direct bandgap transition, and a comparison of results in monolayer and bulk allows the assignment of each Raman feature near the M or K points of the Brillouin zone. Our work highlights the underlying physics of intervalley scattering of electrons by acoustic phonons, which is essential for valley depolarization in MoS2.
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This work describes a resonance Raman study performed on samples with one, two, and three layers (1L, 2L, 3L), and bulk MoS2, using more than 30 different laser excitation lines covering the visible range, and focusing on the intensity of the two most pronounced features of the Raman scattering spectrum of MoS2 (E2g(1) and A1g bands). The Raman excitation profiles of these bands were obtained experimentally, and it is found that the A1g feature is enhanced when the excitation laser is in resonance with A and B excitons of MoS2, while the E2g1 feature is shown to be enhanced when the excitation laser is close to 2.7 eV. We show from the symmetry analysis of the exciton-phonon interaction that the mode responsible for the E2g(1) resonance is identified as the high energy C exciton recently predicted [D. Y. Qiu, F. H. da Jornada, and S. G. Louie, Phys. Rev. Lett. 111, 216805 (2013)].
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Anisotropic materials are characterized by a unique optical response, which is highly polarization-dependent. Of particular interest are layered materials formed by the stacking of two-dimensional (2D) crystals that are naturally anisotropic in the direction perpendicular to the 2D planes. Black phosphorus (BP) is a stack of 2D phosphorene crystals and a highly anisotropic semiconductor with a direct band gap. We show that the angular dependence of polarized Raman spectra of BP is rather unusual and can be explained only by considering complex values for the Raman tensor elements. This result can be traced back to the electron-photon and electron-phonon interactions in this material.
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CONSPECTUS: Raman spectroscopy is one of the most powerful experimental tools to study graphene, since it provides much useful information for sample characterization. In this Account, we show that this technique is also convenient to study other bidimensional materials beyond graphene, and we will focus on the semiconducting transition metal dichalcogenides (MX2), specifically on MoS2 and WS2. We start by comparing the atomic structure of graphene and 2H-MX2 as a function of the number of layers in the sample. The first-order Raman active modes of each material can be predicted on the basis of their corresponding point-group symmetries. We show the analogies between graphene and 2H-MX2 in their Raman spectra. Using several excitation wavelengths in the visible range, we analyze the first- and second-order features presented by each material. These are the E2g and 2TO(K) bands in graphene (also known as the G and 2D bands, respectively) and the A1', E', and 2LA(M) bands in 2H MX2. The double-resonance processes that originate the second-order bands are different for both systems, and we will discuss them in terms of the different electronic structure and phonon dispersion curves presented by each compound. According to the electronic structure of graphene, which is a zero band gap semiconductor, the Raman spectrum is resonant for all the excitation wavelengths. Moreover, due to the linear behavior of the electronic dispersion near the K point, the double-resonance bands of graphene are dispersive, since their frequencies vary when we change the laser energy used for the sample excitation. In contrast, the semiconducting MX2 materials present an excitonic resonance at the direct gap, and consequently, the double-resonance Raman bands of MX2 are not dispersive, and only their intensities depend on the laser energy. In this sense, resonant Raman scattering experiments performed in transition metal dichalcogenides using a wide range of excitation energies can provide information about the electronic structure of these materials, which is complementary to other optical spectroscopies, such as absorption or photoluminescence. Raman spectroscopy can also be useful to address disorder in MX2 samples in a similar way as it is used in graphene. Both materials exhibit additional Raman features associated with phonons within the interior of the Brillouin zone that are activated by the presence of defects and that are not observed in pristine samples. Such is the case of the well-known D band of graphene. MX2 samples present analogous features that are clearly observed at specific excitation energies. The origins of these double-resonance Raman bands in MX2 are still subjects of current research. Finally, we discuss the suitability of Raman spectroscopy as a strain or doping sensor. Such applications of Raman spectroscopy are being extensively studied in the case of graphene, and considering its structural analogies with MX2 systems, we show how this technique can also be used to provide strain/doping information for transition metal dichalcogenides.
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Resonant Raman spectroscopy (RRS) is a very useful tool to study physical properties of materials since it provides information about excitons and their coupling with phonons. We present in this work a RRS study of samples of WSe2 with one, two, and three layers (1L, 2L, and 3L), as well as bulk 2H-WSe2, using up to 20 different laser lines covering the visible range. The first- and second-order Raman features exhibit different resonant behavior, in agreement with the double (and triple) resonance mechanism(s). From the laser energy dependence of the Raman intensities (Raman excitation profile, or REP), we obtained the energies of the excited excitonic states and their dependence with the number of atomic layers. Our results show that Raman enhancement is much stronger for the excited A' and B' states, and this result is ascribed to the different exciton-phonon coupling with fundamental and excited excitonic states.