RESUMO
Using the effective mass approximation in a parabolic two-band model, we studied the effects of the geometrical parameters, on the electron and hole states, in two truncated conical quantum dots: (i) GaAs-(Ga,Al)As in the presence of a shallow donor impurity and under an applied magnetic field and (ii) CdSe-CdTe core-shell type-II quantum dot. For the first system, the impurity position and the applied magnetic field direction were chosen to preserve the system's azimuthal symmetry. The finite element method obtains the solution of the Schrödinger equations for electron or hole with or without impurity with an adaptive discretization of a triangular mesh. The interaction of the electron and hole states is calculated in a first-order perturbative approximation. This study shows that the magnetic field and donor impurities are relevant factors in the optoelectronic properties of conical quantum dots. Additionally, for the CdSe-CdTe quantum dot, where, again, the axial symmetry is preserved, a switch between direct and indirect exciton is possible to be controlled through geometry.
RESUMO
Quantum wires continue to be a subject of novel applications in the fields of electronics and optoelectronics. In this work, we revisit the problem of determining the electron states in semiconductor quantum wires in a self-consistent way. For that purpose, we numerically solve the 2D system of coupled Schrödinger and Poisson equations within the envelope function and effective mass approximations. The calculation method uses the finite-element approach. Circle, square, triangle and pentagon geometries are considered for the wire cross-sectional shape. The features of self-consistent band profiles and confined electron state spectra are discussed, in the latter case, as functions of the transverse wire size and temperature. Particular attention is paid to elucidate the origin of Friedel-like oscillations in the density of carriers at low temperatures.